iso high voltage mosfet transistor

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...High Voltage MOSFET is an Ultra-hv MOSFET, a kind of High Voltage Mosfet Transistor, that offers outstanding performance in terms of heat dissipation and low on-resistance. It is equipped with advanced features such as new Lateral Variable Doping Technology, Special Power MOS Structure and excellent characteristics in high-temperature, allowing for superior performance over the conventional High Voltage MOSFET. The High

Brand Name:Hua Xuan Yang

Model Number:AP7H03DF

Place of Origin:ShenZhen China

... charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. High Voltage Mosfet Transistor Features VDS =

Brand Name:Lingxun

Place of Origin:China

Multipurpose Low ON Resistance Voltage MOSFET Transistors For Adaptor *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-...

Brand Name:onsemi

Model Number:FDA50N50

Place of Origin:Original Factory

FDA50N50 High Voltage Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and...

Brand Name:Vishay / Siliconix

Model Number:IRFZ44N

IRFZ44N - The Ultimate Power MOSFET for Electronics Enthusiasts Discover the Pros and Cons of the IRFZ44N and Empower Your Projects Today Are you an electronics enthusiast looking for a high-performance MOSFET transistor? Look no further than the IRFZ44N...

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:UTC-IC

Model Number:2SB1151-Y

Place of Origin:Original

...VOLTAGE LARGE CURRENT high power mosfet transistors „ FEATURES *High Power Dissipation : PD=1.5W(Ta=25℃) *Complementary to 2SD1691. „ ABSOLUTE MAXIMUM RATING (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage...

Brand Name:original

Model Number:SIHB22N60E-E3

Place of Origin:Original Manufacturer

HIGH VOLTAGE SINGLE MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS...

Brand Name:onsemi

Model Number:FDD3672

Place of Origin:original

FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 6.5A (Ta), 44A (Tc) Drive Voltage (Max Rds...

Brand Name:FAIRCHILD

Model Number:MJD340TF

Place of Origin:Original

... Lead (I-PAK, “- I” Suffix) NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 3 V

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Brand Name:Huixin

Model Number:H10N65

Place of Origin:China

N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply ...

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

IRF640NPBF DIP Trans N Channel 200V 18A Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This ...

Brand Name:IXYS

Model Number:CLA50E1200HB

Place of Origin:CN

CLA50E1200HB High Efficiency Thyristor for for line frequency 1200V 50A Features / Advantages: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability Applications: ● Softstart AC motor control ● DC Motor control ● Power converter ● ...

Place of Origin:United States

Model Number:SY7201ABC Silergy SOT 23

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Place of Origin:US

Brand Name:Original

Model Number:IRF3205PBF

...high quality, if interested,pls contact us to get quote. Our company can supply all IRF Series, hot sale and in stock, wholesale will get good quote. Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage...

Brand Name:original

Model Number:IRF431

Place of Origin:original

...Rugged palysllcon gBte cell structure ■Lqw input capacitance # Extended safe operatlng ar9g ●improved high temperature rellabllty ●TO~3 package (High voltage} Product Attribute Attribute Value Product Category: MOSFET Technology: Si Mounting Style:

Model Number:FDMQ8203

Place of Origin:America

Brand Name:ON

...MOSFET 2N/2P-CH 100V/80V 12-MLP Original Mosfet Transistor Products Description: 1. FDMQ8203 dual-channel FET, MOSFET, N and P channels, 6 A, 100 V, 0.085 OHM, 10 V, 3 V 2. His Quad MOSFET Solution provides for a promise that provides a ten-fold improvement in the Power Dissipation over Diode Bridge. 3.High-Efficiency Bridge Rectifiers Technological Parameters: Polarity N - Channel dissipated power 22 W Threshold voltage...

Brand Name:Semelab

Model Number:D1028UK

Place of Origin:UK

... A Vds - Drain-Source Breakdown Voltage: 70 V Operating Frequency: 175 MHz Gain: 13 dB Output Power: 300 W Maximum Operating Temperature: + 150 C ...

Brand Name:STMicroelectronics

Model Number:STB24N60DM2

...Mosfet Transistors Field Effect Transistor Discrete N-Channel N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages App Characteristics Features Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Description These high voltage...