igbt n channel discrete semiconductors

Brand Name:Toshiba America Electronic Components

Model Number:GT50N322A

Place of Origin:CHINA

...IGBT N-Channel 1000V 3-Pin TO-3P(N) DISCRETE IGBT Components Product Technical Specifications Part number GT50N322A Base part number 50N322 EU RoHS Compliant with Exemption ECCN (US) EAR99 Part Status Active HTS 8541.29.00.95 SVHC Yes SVHC Exceeds Threshold Yes Automotive No PPAP No Product Category IGBT...

Brand Name:Original Factory

Model Number:FP25R12KT4B11BPSA1

Place of Origin:CN

...IGBT Modules FP25R12KT4B11BPSA1 Discrete Semiconductor IGBT Modules Product Description Of FP25R12KT4B11BPSA1 FP25R12KT4B11BPSA1 is EconoPIM™2 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diodeund PressFIT/NTC. ​Specification Of FP25R12KT4B11BPSA1 Part Number: FP25R12KT4B11BPSA1 Rated Resistance: 5 KΩ Deviation Of R100: -5-5 % Power Dissipation: 20 MW B-Value: 3375 K Symbol Size: 16x16 Features Of Automotive IGBT...

Brand Name:Infineon Technologies

Model Number:SPW35N60C3

Product Range IGBT CoolMOS Discrete Semiconductors SPW35N60C3 MOSFET N-Ch 650V 34.6A TO247-3 App Characteristics New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv /dt rated Ultra low effective capacitances ...

Brand Name:Analog Devices Inc.

Model Number:ADUM4138WBRNZ-RL

Place of Origin:China,GuangDong,ShenZhen

6A Gate Isolators Driver Magnetic Coupling 5000Vrms 1 Channel 28-SOIC-W-FP ADUM4138WBRNZ-RL PRODUCT DESCRIPTION Part number ADUM4138WBRNZ-RL is manufactured by TI Technologies and distributed by Stjk. As one of the leading distributors of electronic ...

Brand Name:Original

Model Number:IRF740PBF

Place of Origin:Original

IRF740PBF Integrated Circuit IC Chips Electronic Components IC MOSFET PRODUCT DESCRIPTION Part number # IRF740PBF is manufactured by Vishay Technologies and distributed by Jalixin. As one of the leading distributors of electronic products, we carry many ...

Model Number:SLIMDIP-S

... Minimum Operating Temperature - 30 C Maximum Operating Temperature + 115 C Configuration 6-Pack Transistor Polarity N and P-Channel Id - Continuous Drain Current 3.1 mA Operating Supply Voltage 300 V Subcategory Discrete Semiconductor Modules < DIPIPM >

Brand Name:IXYS

Model Number:IXGH24N170

...IGBT IXGH24 IGBT 1700V 50A 250W TO247AD Discrete Semiconductor Products Specification:High Voltage IGBT NPT 1700 V 50 A 250 W Through Hole TO-247AD Part number IXGH24N170 Category Discrete Semiconductor Products 　 Transistors - IGBTs - Single Mfr IXYS Series - Package Tube Part Status Active IGBT...

Brand Name:Microchip

Model Number:APT25GT120BRG

Place of Origin:USA

Discrete Semiconductors APT25GT120BRG TO-247-3 IGBT Transistors Product Description: The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ...

Brand Name:Infineon Technologies

Model Number:BSS138NH6327

Place of Origin:CN/MY/MX

... switching, in an electronic circuit. Some common examples of Discrete Semiconductor Products include diodes, transistors, and thyristors. Discrete Semiconductor Products common features include: - Maximum voltage and current ratings: This refers to the

Brand Name:Mitsubishi

Model Number:MCC44-14IO8B

Place of Origin:Japan

IXYS High Frequency Thyristor IGBT Discrete Semiconductor Module MCC44-14IO8B IXYS Discrete Semiconductor Modules 44 Amp Product Name IXYS IGBT Module Part number MCC4414IO8B MCC44-14I08B Manufacturer brand IXYS Description IXYS High Frequency Thyristor ...

Brand Name:TI

Model Number:ESD401DPYR

Place of Origin:USA

... such as Logic, Amplifier, Comparator, Timer and Voltage Regulator. The semiconductor transistors we offer include BJT, MOSFET, IGBT and JFET. We also specialize in rectifiers, 1 pair common cathode and SC-63, SC-89, SC-90, SC-88 packages. Our ...

Brand Name:onsemi

Model Number:FGHL75T65LQDTL4

FGHL75T65LQDTL4 FS4 LOW VCESAT IGBT 650V 75A TO2 Product Attributes TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors - IGBTs - Single Mfr onsemi Series - Package Tube Product Status Active IGBT Type Trench Field Stop Voltage - ...

Brand Name:IXYS

Model Number:IXFN38N100Q2

Place of Origin:USA

IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds Manufacturer: IXYS Product Category: Discrete Semiconductor Modules RoHS: Details Product: Power MOSFET Modules Technology: Si Vgs - Gate-Source Voltage: - 30 V, + 30 V Mounting Style: ...

Brand Name:TOSHIBA

Model Number:GT50N322A

Place of Origin:N/S

... Model Supply and Demand Status Limited Fake Threat In the Open Market 69 pct. Popularity Low Manufacturer Toshiba Semiconductor and Storage Category Discrete Semiconductor Products Family IGBTs - Single

Model Number:6MBP30VSC060-50

Place of Origin:China

6MBP30VSC060-50 Brand New Genuine Original IC Stock Professional BOM Supplier Spot Goods Find information here in stock.xlsx Product Attributes Features •600V-10A 3-phase IGBT inverter bridge including control ICs for gate driving and protection •Easy PCB ...

Model Number:HM10N10K

Place of Origin:Guangdong, China

Brand Name:KAIGENG

HM10N10K TO-252 Electronic Components Diodes Engine Spot MOS FET N-Channel New Original HM10N10K #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border...

Brand Name:AOS

Model Number:AO3424

Place of Origin:original

AO3424 MOSFET Power Electronics Discrete Semiconductor N-Channel 30V 3.8A 1.4W Surface Mount Package SOT-23-3 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 3.8A (Ta) Drive ...

Brand Name:original

Model Number:TK30E06N1,S1X

Place of Origin:original

...Discrete Semiconductors Transistors MOSFET Through Hole . Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel

Categories:IGBT Modules

Country/Region:china

IGBT Module Three Phase Inverter 1200 V 335 A Chassis Mount Module

Brand Name:onsemi

Model Number:FGD3N60UNDF

Place of Origin:United States

FGD3N60UNDF IGBT NPT 600 V 6 A 60 W Surface Mount TO-252AA Datasheet:FGD3N60UNDF Category Single IGBTs Mfr onsemi Product Status Obsolete IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600 V Current - Collector (Ic) (Max) 6 A Current - Collector...