RF Power Transistors BLS2731-150 Microwave power transistor RF Power Transistors
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BLS2731-150 is a Microwave power transistor. Part NO: BLS2731-150 Brand: Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in ......
Mega Source Elec.Limited
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150mhz - 175mhz RF Power Mosfet Transistors M68702h For Fm Mobile Radio
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150-175MHZ RF POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor......
Shenzhen Huahao Gaosheng Technology Co., Ltd
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BLF177 MRF150 RF MOSFET Transistors 5-150MHz 150Watts 50Volt Gain 17dB
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...: 125 V Rds On - Drain-Source Resistance: - Operating Frequency: 150 MHz Gain: 17 dB Output Power: 150 W Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: 221-11-3 Packaging: Tray Brand:...
Wisdtech Technology Co.,Limited
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Complementary 15A 250V 150W PNP Power Bipolar Transistors NJW0302G
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...Transistors 15A 250V 150W NJW0281G 250V 15A 150W hfe75-150 and NJW0302G 250V 15A 150W hfe75-150 are pair. 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 150 WATTS These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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2SC4883A 3 Pin Transistor Silicon NPN Epitaxial Planar Transistor , npn smd transistor
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... (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage 2SC4883 Open emitter 150 V 2SC4883A 180 V VCEO Collector-emitter voltage 2SC4883 Open base 150 V 2SC4883A 180 V VEBO Emitter-base voltage Open collector 6...
Anterwell Technology Ltd.
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TO-252Tip Power Transistors 3DD13002 Transistor NPN
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...Transistors 3DD13002 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 1.25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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150-175MHz RF Power Mosfet Transistors M68702H for FM Mobile Radio
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M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND SS513AT HONEYWELL ......
Shenzhen Koben Electronics Co., Ltd.
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a1941 c5198 Transistor a1941 c5198 Transistor c5198 Amplifier 2SC5198 PNP Transistor 2SA1941 2SC5198 10A 100W TO-3P Original New
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... Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: 2 V Gain Bandwidth Product fT: 30 MHz Maximum Operating Temperature: + 150 C Continuous Collector Current: 10 A 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will...
Shenzhen Quanyuantong Electronics Co., Ltd.
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KTD1047 NPN IGBT Transistor Complementary To KTB817 For 60w High Power Amplifier
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...Transistor Complementary to KTB817 for 60w High Power Amplifier Application CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage VEBO 6 V Collector Current DC IC 12 A Pulse ICP 15 Collector Power Dissipation (Tc=25) PC 100 W Junction Temperature Tj 150......
Shenzhen ATFU Electronics Technology ltd
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BSC109N10NS3G npn power transistors 109N10NS n-channel mosfet
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... level ·Excellent gate charge x RDs(on)product (FOM) · Very low on-resistance RDs(on) ·150 C operating temperature · Pb-free lead plating; RoHS compliant ·Qualified according to JEDEC1) for target application · Halogen-free ......
Shenzhen Retechip Electronics Co., Ltd
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