Motor Driver Low Gate Voltage Mosfet , Multiscene Low Vgs N Channel Mosfet
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Low Gate Voltage MOSFET with Reliable and High EAS Capability *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, svg {......
Reasunos Semiconductor Technology Co., Ltd.
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Multiscene Low Voltage N Channel MOSFET For Power Management
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Multiscene Low Voltage MOSFET N Channel For Power Management *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, svg {display: ......
Guangdong Lingxun Microelectronics Co., Ltd
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FDMC86102L High-Performance Low-Voltage N-Channel MOSFET Power Electronics shielded Gate 100V 18A
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...Low-Voltage N-Channel MOSFET Power Electronics shielded Gate 100V 18A Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 7A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 23mOhm @ 7A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V Vgs......
Shenzhen Sai Collie Technology Co., Ltd.
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Small P Channel Mosfet High Side Switch / Low Power Transistor Long Life
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...Channel Mosfet High Side Switch / Low Power Transistor Long Life General Description The AOD413A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS(ON) (mΩ max)† at VGS= VGS......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
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...Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS......
Beijing Silk Road Enterprise Management Services Co.,LTD
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SSS7N60B 600V N-Channel MOSFET power mosfet ic Field Effect Transistor
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...100% avalanche tested • Improved dv/dt capability • TO-220F package isolation = 4.0kV (Note 6) General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology....
Anterwell Technology Ltd.
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IRFR9024NTRPBF Integrated Circuit IC Chip P- Channel MOSFET 55V 11A 38W Surface Mount D- Pak
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... P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 175 mOhm @ 6.6A, 10V Vgs(th) (Max) @...
Shenzhen Koben Electronics Co., Ltd.
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IRLML6401 N Channel Mosfet SOT23-3 IRLML6401TRPBF PD 1.3W
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...Channel MOSFET SOT23-3 IRLML6401TRPBF Products Description: MOSFET; Power; P-Ch; VDSS -12V; RDS(ON) 0.05Ohm; ID -4.3A; Micro3; PD 1.3W; VGS +/-8V Trans MOSFET P-CH 12V 4.3A 3-Pin Micro T/R Transistor: P-MOSFET; unipolar; logic level; -12V; -4.3A; 1.3W These P-Channel MOSFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low......
Shenzhen Res Electronics Limited
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500V 5A N-Channel MOSFET advanced high voltage MOSFET process AOD5N50
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...popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. Product Summary VDS 600V@150℃ D (at VGS=10V) 5A RDS(ON)...
ChongMing Group (HK) Int'l Co., Ltd
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JY13M BLDC Motor Driver MOSFET N And P Channel 40V Surface Mount
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... gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.5V,ID=8A P-Channel -40V <45mΩ@VGS=-10V,ID=...
Shanghai Juyi Electronic Technology Development Co., Ltd
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