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Through Hole IGBT Transistor Module IKW15N120CS7XKSA1 1200V 36A 176W PG-TO247-3

Through Hole IGBT Transistor Module IKW15N120CS7XKSA1 1200V 36A 176W PG-TO247-3

Through Hole IGBT Transistor Module IKW15N120CS7XKSA1 1200V 36A 176W PG-TO247-3
Through Hole IGBT Transistor Module IKW15N120CS7XKSA1 1200V 36A 176W PG-TO247-3
Categories IGBT Transistor Module
Brand Name: Infineon Technologies
Model Number: IKW15N120CS7XKSA1
MOQ: 50pcs
Price: Negotiable
Supply Ability: 1000000pcs
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 36 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Power - Max: 176 W
Switching Energy: 750µJ (on), 700µJ (off)
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Company Info.
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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Through Hole IGBT Transistor Module IKW15N120CS7XKSA1 1200V 36A 176W PG-TO247-3

IKW15N120CS7XKSA1 IGBT Trench Field Stop 1200 V 36 A 176 W Through Hole PG-TO247-3

Infineon Technologies TRENCHSTOP™ IGBT7 Discretes & Modules

Infineon Technologies TRENCHSTOP™ IGBT7 Discretes and Modules are designed for variable speed drives. 20% of energy or 17 million tons of CO2 could be saved if only half of all industrial drives had electric speed control. Infineon facilitates this switch with the TRENCHSTOP IGBT7 technology.

FEATURES & BENEFITS DIAGRAM

Infineon Technologies TRENCHSTOP™ IGBT7 Discretes & Modules

FEATURES

  • Overload capability via operation temperature of Tvjop=175°C under overload conditions
  • Lower on-state voltage by around 20% compared to IGBT4
  • Enhanced controllability to meet motor insulation requirements or EMI limitations
  • Reduction of 100mV forward voltage, lower reverse recovery loss, and improved softness with the EC7 emitter-controlled diode, compared to the EC4
  • Benefits
    • EconoDUAL™ 3 module provides 50% higher output current for the same frame-size compared to the former IGBT generation
    • Easy 1B and 2B are pin-to-pin compatible with the previous IGBT4 generation
    • 15% lower power loss and in addition a decrease in conduction losses at the given dv/dt limitation
    • CGE and CGC are balanced to giving full control over the dv/dt and to optimize the switching waveform

FEATURED PRODUCTS

Infineon constantly expands the IGBT7 product portfolio to higher voltage or current classes, further product families as well as additional features such as PressFIT, pre-applied thermal interface material (TIM) or advanced H2S protection.

650V TRENCHSTOP IGBT7 IN TO-247

Features

  • TO-247 package
  • Current classes from 20A to 75A
  • Succeeds 600V TRENCHSTOP IGBT, 600V TRENCHSTOP Performance and HighSpeed 3 H3 IGBT
  • Used as an alternative to the non-short-circuit rated TRENCHSTOP5 technologies
  • Blocking voltage increase from 600V to 650V
  • Plug & play solution for easy replacement
  • Best diode forward and IGBT saturation voltage performance
  • Offer up to 5µs SCWT (Short Circuit Withstand Time)

Applications

  • Industrial motor drive
  • UPS (Uninterruptible Power Supply)
  • PFC (Power Factor Correction)
  • Photovoltaic

EASY MODULES WITH TRENCHSTOP IGBT7

Features

  • Easy 1B, 2B or 3B housing
  • Current classes from 25A to 100A in sixpack configuration and 10A to 100A in PIM configuration
  • Blocking voltage of 1200V
  • 12mm height for the whole portfolio allows for easy platform designs
  • PressFIT pins
  • Pin-to-pin compatible with IGBT4

Applications

  • Industrial motor drive
  • Heating, ventilation and air conditioning (HVAC)

ECONODUAL™ 3 MODULE WITH IGBT7

Features

  • Improved EconoDUAL™ 3 housing
  • 900A
  • Blocking voltage of 1200V
  • PressFIT control pins and screw power terminals

Applications

  • General purpose drives
  • Hybrid electric busses
  • CAV (Commercial and Agricultural Vehicles)
  • Solar applications
Product Tags:

Through Hole IGBT Transistor Module

  

1200V IGBT Transistor Module

  

Module IKW15N120CS7XKSA1

  
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Through Hole IGBT Transistor Module IKW15N120CS7XKSA1 1200V 36A 176W PG-TO247-3

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